Mobility anisotropy of two-dimensional semiconductors

Abstract

The carrier mobility of anisotropic two-dimensional (2D) semiconductors under longitudinal acoustic (LA) phonon scattering was theoretically studied with the deformation potential theory. Based on Boltzmann equation with relaxation time approximation, an analytic formula of intrinsic anisotropic mobility was deduced, which shows that the influence of effective mass to the mobility anisotropy is larger than that of deformation potential constant and elastic modulus. Parameters were collected for various anisotropic 2D materials (black phosphorus, Hittorf's phosphorus, BC${}_2$N, MXene, TiS${}_3$, GeCH${}_3$) to calculate their mobility anisotropy. It was revealed that the anisotropic ratio was overestimated in the past.

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• Ultrahigh carrier mobility, Dirac cone and high stretchability in pyrenyl and pyrazinoquinoxaline graphdiyne/graphyne nanosheets confirmed by first-principles
• First Principles Study of 2D Ring-Te and its Electrical Contact with Topological Dirac Semimetal