Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction

Abstract

The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10^4, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~ 11 %. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7 %. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.

32 pages

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Cited by in corpus (13)

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• Atomically thin p-n junctions based on two-dimensional materials
• Probing low-energy hyperbolic polaritons in van der Waals crystals with an electron microscope
• Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS${}_2$ transistor
• Towards colloidal spintronics through Rashba spin-orbit interaction in lead sulphide nanosheets
• Exchange bias in molecule/Fe3GeTe2 van der Waals heterostructures via spinterface effects
• The 2D pn Junction Driven Out-of-Equilibrium
• Liquid-solid surface phase transformation of fluorinated fullerene on monolayer tungsten diselenide
• Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor
• Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures
• Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes
• The gate tunable 2D pn junction driven out-of-equilibrium