196 citations · 508 across the 14 of their papers we have counts for
14 papers
A molecular-spin photovoltaic device
Xiangnan Sun, Saül Vélez, Ainhoa Atxabal +6
We fabricated a C60-based molecular spin photovoltaic device that integrated a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response c…
Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries
Dmitrii Khokhriakov, Bogdan Karpiak, Anamul Md. Hoque +3
The utilization of large-area graphene grown by chemical vapour deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic ci…
Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor
Kaushik Bairagi, Elisabetta Zuccatti, Francesco Calavalle +6
The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typicall…
Spin communication over 30 m long channels of chemical vapor deposited graphene on SiO
Z. M. Gebeyehu, S. Parui, J. F. Sierra +7
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 m in platinum…
Frequency driven inversion of tunnel magnetoimpedance in magnetic tunnel junctions
Subir Parui, Mário Ribeiro, Ainhoa Atxabal +5
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-fr…
Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction
Saül Vélez, David Ciudad, Joshua Island +8
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional mate…
Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy
Subir Parui, Ainhoa Atxabal, Mário Ribeiro +5
We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures belo…
Temperature dependent transport characteristics of graphene/n-Si diodes
S. Parui, R. Ruiter, P. J. Zomer +3
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such i…
Bias dependent features in spin transport as a probe of the conduction band minima in Si
S. Parui, K. G. Rana, T. Banerjee
Unusual features in the bias dependence of spin transport are observed in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the…
Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface
S. Parui, P. S. Klandermans, S. Venkatesan +2
Hot electron transport of direct and scattered carriers across an epitaxial NiSi_2/n-Si(111) interface, for different NiSi_2 thickness, is studied using Ballistic Electron Emission…
Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3
S. Roy, A. M. Kamerbeek, K. G. Rana +2
SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semicond…
Comparison of hot-electron transmission in ferromagnetic Ni on epitaxial and polycrystalline Schottky interfaces
S. Parui, K. G. Rana, L. Bignardi +3
The hot-electron attenuation length in Ni is measured as a function of energy across two different Schottky interfaces viz. a polycrystalline Si(111)/Au and an epitaxial Si(111)/Ni…
Hot electron transport in a strongly correlated transition metal oxide
Kumari Gaurav Rana, Takeaki Yajima, Subir Parui +5
Oxide heterointerfaces are ideal for investigating strong correlation effects to electron transport, relevant for oxide-electronics. Using hot-electrons, we probe electron transpor…
Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale
K. G. Rana, S. Parui, T. Banerjee
We investigate electron transport across a complex oxide heterointerface of LaSrMnO (LSMO) on Nb:SrTiO (Nb:STO) at different temperatures. For this, we em…