activity
20132020
most citedSpin communication over 30 m long channels of chemical vapor deposited graphene on SiO

46 citations · 108 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall202015 cited

Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries

Dmitrii Khokhriakov, Bogdan Karpiak, Anamul Md. Hoque +3

The utilization of large-area graphene grown by chemical vapour deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic ci…

physics.app-ph20207 cited

Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor

Kaushik Bairagi, Elisabetta Zuccatti, Francesco Calavalle +6

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typicall…

cond-mat.mes-hall201946 cited

Spin communication over 30 m long channels of chemical vapor deposited graphene on SiO

Z. M. Gebeyehu, S. Parui, J. F. Sierra +7

We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 m in platinum…

cond-mat.mtrl-sci201319 cited

Hot electron transport in a strongly correlated transition metal oxide

Kumari Gaurav Rana, Takeaki Yajima, Subir Parui +5

Oxide heterointerfaces are ideal for investigating strong correlation effects to electron transport, relevant for oxide-electronics. Using hot-electrons, we probe electron transpor…

cond-mat.mes-hall201321 cited

Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale

K. G. Rana, S. Parui, T. Banerjee

We investigate electron transport across a complex oxide heterointerface of LaSrMnO (LSMO) on Nb:SrTiO (Nb:STO) at different temperatures. For this, we em…