Electrical control of near-field energy transfer between quantum dots and 2D semiconductors

Abstract

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.

19 Pages, 11 figures. Main text and supporting information. Nano Letters, 2015, Article ASAP

References in corpus (10)

• Boron nitride substrates for high-quality graphene electronics
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Two-Dimensional Material Nanophotonics
• Probing Excitonic Dark States in Single-layer Tungsten Disulfide
• Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
• Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures
• Electrical Control of Optical Properties of Monolayer MoS${}_2$
• Reduced dielectric screening and enhanced energy transfer in single and few-layer MoS2
• Electrical Control of Optical Emitter Relaxation Pathways enabled by Graphene
• Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene

Cited by in corpus (1)

• Electrical control of lifetime-limited quantum emitters using 2D materials