Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe
arXiv:1506.02214 · doi:10.1103/PhysRevLett.115.046602
Abstract
Extremely large magnetoresistance (XMR) was recently discovered in WTe, triggering extensive research on this material regarding the XMR origin. Since WTe is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe: (1) WTe is electronically 3D with a mass anisotropy as low as , as revealed by the 3D scaling behavior of the resistance with , being the magnetic field angle with respect to c-axis of the crystal and being the mass anisotropy; (2) the mass anisotropy varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe, including the origin of the remarkable 'turn-on' behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.
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