Magnetoresistance and Kondo effect in the nodal-line semimetal VAs${}_2$

Abstract

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity ${\rho }_{xx}(T,H)$, Hall resistivity ${\rho }_{xy}(T,H)$, and magnetic susceptibility as a function of temperature and various magnetic fields for VAs${}_2$ with a monoclinic crystal structure. The band structure calculations show that VAs${}_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in ${\rho }_{xx}(T)$ measured at $H$ = 0 demonstrates that an additional magnetic impurity (V${}^{4+}$, $S$ = 1/2) occurs in VAs${}_2$ single crystals, evidenced by both the fitting of ${\rho }_{xx}(T)$ data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of ${\rho }_{xx}(T)$ emerge also in VAs${}_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^{3}4s^2$) element as a platform for studying the influence of magnetic impurities to the topological properties.

arXiv comment8 pages, 5 figures. arXiv admin note: text overlap with arXiv:2007.04814

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