Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2

Abstract

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity rhoxx(T,H), Hall resistivity rhoxy(T,H) and quantum oscillations of the magnetization as a function of temperature at various magnetic fields for MoO2 with monoclinic crystal structure. The band structure calculations show that MoO2 is a nodal-line semimetal when spin-orbit coupling is ignored. It was found that a large magnetoresistance reaching 5.03x10^4% at 2 K and 9 T, its nearly quadratic field dependence and a field-induced up-turn behavior of rhoxx(T), the characteristics common for many topologically non-trivial as well as trivial semimetals, emerge also in MoO2. The observed properties are attributed to a perfect charge-carrier compensation, evidenced by both calculations relying on the Fermi surface topology and the Hall resistivity measurements. Both the observation of negative magnetoresistance for magnetic field along the current direction and the non-zero Berry phase in de Haas-van Alphen measurements indicate that pairs of Weyl points appear in MoO2, which may be due to the crystal symmetry breaking. These results highlight MoO2 as a new platform materials for studying the topological properties of oxides.

8 papges, 7 figures

References in corpus (9)

• Titanic Magnetoresistance in WTe2
• Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2
• Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals
• The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2
• Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2
• Large magnetoresistance in type-II Weyl semimetal WP${}_2$
• Separation of Electron and Hole Dynamics in the Semimetal LaSb
• Fermi surface of MoO2 studied by angle-resolved photoemission spectroscopy, de Haas-van Alphen measurements, and electronic structure calculations
• Magnetotransport properties of MoP${}_2$

Cited by in corpus (15)

• Extended Kohler${}^{,}$s Rule of Magnetoresistance
• Scaling Behavior of Magnetoresistance and Hall Resistivity in Altermagnet CrSb
• Extremely large magnetoresistance in the "ordinary" metal ReO3
• Complex field-, temperature-, and angle-dependent Hall effects from intrinsic Fermi surface revealed by first-principles calculations
• Universal Scaling Behavior of Transport Properties in Non-Magnetic RuO${}_2$
• A combined First-principles and Boltzmann transport theory methodology for studying magnetotransport in magnetic materials
• Magnetoresistance and Kondo effect in the nodal-line semimetal VAs${}_2$
• Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure
• Magnetotransport and Berry phase Tuning in Gd-doped Bi2Se3 Topological Insulator Single Crystals
• The inadequacy of the $\rho$-T curve for phase transitions in the presence of magnetic fields
• Topological nontrivial berry phase in altermagnet CrSb
• Sign reversal of magnetoresistivity in massive nodal-line semimetals due to Lifshitz transition of Fermi surface
• Topological Electronic Structure and Transport Properties of the Distorted Rutile-type WO${}_2$
• Negative transverse magnetoresistance due to negative off-diagonal mass in linear dispersion materials
• Magnetoresistance in ZrSi$X$ ($X=$ S, Se, Te) nodal-line semimetals