Scaling Behavior of Magnetoresistance and Hall Resistivity in Altermagnet CrSb

Abstract

The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to exhibit substantial spin splitting near the Fermi level. After successfully growing high-quality CrSb single crystals, we performed comprehensive magnetization, magnetoresistance (MR), and Hall resistivity measurements, along with the electronic structure, and Fermi surface (FS) calculations, as well as the magneto-transport property numerical simulations. An antiferromagnetic transition occurring at $T_N$ = 712 K was reconfirmed. It was found that both experimental MR and Hall resistivity are consistent with the numerical simulation results, and exhibit obvious scaling behavior. The nonlinear Hall resistivity is due to its multi-band structure, rather than an anomalous Hall effect (AHE). Especially, the scaling behavior in Hall resistivity is first observed within an AM material. These findings demonstrate that the magneto-transport properties in CrSb originate from the intrinsic electronic structure and are dominated by the Lorentz force.

5 pages, 4 figures

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• Universal Scaling Behavior of Transport Properties in Non-Magnetic RuO${}_2$
• A Theory of Anisotropic Magnetoresistance in Altermagnets and Its Applications
• Exploration of Altermagnetism in $\mathrm{Ru}{\mathrm{O}}_2$
• Epitaxial growth and transport properties of a metallic altermagnet CrSb on a GaAs (001) substrate
• Altermagnetism, ARPES, symmetry, non-relativistic band splitting
• Topological nontrivial berry phase in altermagnet CrSb
• Altermagnetism from the viewpoint of chemistry