High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
arXiv:1506.01537 · doi:10.1088/0022-3727/48/23/235002
Abstract
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.
16 pages, 5 figures
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