Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2

Abstract

Absence of backscattering and occurrence of weak anti-localization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance in the topological insulator BiSbTeSe2, at temperatures below 50 K. Our analysis shows that the negative magnetoresistance originates from an increase in the density of defect states created by introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative magnetoresistance contribution with increasing temperature and a robustness of the topological surface states to external disorder.

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Cited by in corpus (2)

• Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)
• Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires