Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Abstract

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si${}_3$N${}_4$/SiO${}_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about $-$2%/${}^{\circ }$C in the temperature interval from 25 to 50${}^{\circ }$C.

arXiv comment10 pages, 11 figures, 2 tables; version accepted for publication in J. Appl. Phys

References in corpus (1)

• Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

Cited by in corpus (6)

• Schottky diode temperature sensor for pressure sensor
• Low-temperature formation of platinum silicides on polycrystalline silicon
• Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates
• Diffusion processes in germanium and silicon films grown on Si${}_3$N${}_4$ substrates
• Room-temperature formation of Pt${}_3$Si/Pt${}_2$Si films on poly-Si substrates
• Extended defects as a source of phonon confinement in polycrystalline Si and Ge films