Room-temperature formation of Pt${}_3$Si/Pt${}_2$Si films on poly-Si substrates

Abstract

We propose a way of formation of thin bilayer Pt${}_3$Si/Pt${}_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt${}_2$Si layer formaton between Pt and poly-Si films as a result of Pt magnetron sputtering at room temperature. This layer likely appears due to high enough temperature of Pt ions in the magnetron plasma sufficient for chemical reaction of the silicide film formation on the Si surface. The Pt${}_3$Si layer likely forms from the Pt--Pt${}_3$Si layer (Pt${}_{95}$Si${}_5$), which arises under Pt film during the magnetron sputtering, as a result of Pt removal by wet etching.

3 pages, 3 figures

References in corpus (1)

• Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Cited by in corpus (1)

• Low-temperature formation of platinum silicides on polycrystalline silicon