Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
arXiv:1503.03015 · doi:10.1088/2053-1583/2/1/015003
Abstract
In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.
References in corpus (4)
Cited by in corpus (8)
- First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
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- Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
- Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
- Quantum-mechanical effect in atomically thin MoS2 FET