Theoretical Study of Phosphorene Tunneling Field Effect Transistors

Abstract

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope (SS) below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe2 TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe2 TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

Accepted for publication in Applied Physics Letters

References in corpus (4)

• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
• Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors

Cited by in corpus (3)

• Large Electronic Anisotropy and Enhanced Chemical Activity of Highly Rippled Phosphorene
• Disorder effect on the anisotropic resistivity of phosphorene determined by a tight-binding model
• Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs