An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers

Abstract

We report the first experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function for semiconductors connected with the ferromagnet, a pure spin current is generated in the n-Ge at room temperature. The pure spin current is detected by using the inverse spin Hall effect of either Pt or Pd electrode on the n-Ge. A theoretical model including a geometrical contribution allows to estimate a spin diffusion length in n-Ge at room temperature to be 660 nm. The temperature dependence of the spin relaxation time provides evidence for Elliott-Yafet spin relaxation mechanism.

27 pages, 6 figures, Suppelmental Materials

References in corpus (8)

• Direct electronic measurement of the spin Hall effect
• Study of Intrinsic Spin Hall Effect and Orbital Hall Effect in 4d- and 5d- Transition Metals
• Evolution of the spin Hall effect in Pt nanowires: Size and temperature effects
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Impurity-assisted tunneling magnetoresistance under weak magnetic field
• Donor-driven spin relaxation in multi-valley semiconductors
• Electrical injection and detection of spin accumulation in Ge at room temperature
• Inelastic electron tunneling spectroscopy of local "spin accumulation" devices

Cited by in corpus (9)

• Measurement of spin pumping voltage separated from extrinsic microwave effects
• Dirac-Surface-State-Dominated Spin to Charge Current Conversion in the Topological Insulator $(B{i}_{0.22}S{b}_{0.78}{)}_{2}T{e}_3$ Films at Room Temperature
• Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
• Large Stark tuning of donor electron spin quantum bits in germanium
• Spin current relaxation time in thermally evaporated pentacene films
• Suppressing spin relaxation in silicon
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Inverse spin Hall effect in Nd doped SrTiO3
• Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures