Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study

Abstract

Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.

3 pages, 7 figures

References in corpus (9)

• Topological Insulators
• Topological Insulator Materials
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Landau Quantization of Massless Dirac Fermions in Topological Insulator
• Controlling bulk conductivity in topological insulators: Key role of anti-site defects
• Crystal Structure and Chemistry of Topological Insulators
• Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface
• High-Field Shubnikov-de Haas Oscillations in the Topological Insulator Bi${}_2$Te${}_2$Se
• Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

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• Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ with high charge-carrier density
• Positron surface state as a spectroscopic probe for characterizing surfaces of topological insulator materials
• Bulk contribution to magnetotransport properties of low defect-density Bi${}_2$Te${}_3$ topological insulator thin films
• Coupling-decoupling of conducting topological surface states in thick Bi${}_2$Se${}_3$ single crystals
• Non-contact mutual inductance based measurement of an inhomogeneous topological insulating state in Bi2Se3 single crystals with defects
• Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
• Studies on proximity effect in Mo/Bi1.95Sb0.05Se3 hybrid structure
• Magnetic interactions of 4$f$ electrons in the topological insulator chalcogenide Bi${}_2$Se${}_3$