Temperature-dependent nonlinear phonon shifts in a supported MoS2 monolayer

Abstract

We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence. Temperature dependence of phonon shifts and widths is explained by optical phonon decay process into two acoustic phonons. On the basis of Raman measurements, local temperature change under laser heating power at different global temperatures is derived. Obtained results contribute to our understanding of the thermal properties of two-dimensional atomic crystals and can help to solve the problem of heat dissipation, which is crucial for use in the next generation of nanoelectronic devices.

ACS Appl. Mater. Interfaces (2014)

References in corpus (12)

• Two Dimensional Atomic Crystals
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• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
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• Measurement of mobility in dual-gated MoS2 transistors
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• Energy dissipation in graphene field-effect transistors
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• Response to comment "Measurement of mobility in dual-gated MoS2 transistors"

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• Probing lattice dynamics and electron-phonon coupling in topological nodal-line semimetal ZrSiS
• Phonon Anharmonicity in Bulk $T_d$-MoTe${}_2$
• Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors