Cryogenic silicon surface ion trap

Abstract

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single ${}^{40}$Ca${}^{+}$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\dot{\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $\mu$m. These results open many new avenues to arrays of micro-fabricated ion traps.

12 pages, 4 figures, 1 table

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• Cryogenic Trapped-Ion System for Large Scale Quantum Simulation
• Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features
• Simulating the performance of a distance-3 surface code in a linear ion trap
• Magnetic field stabilization system for atomic physics experiments
• Closed-cycle, low-vibration 4 K cryostat for ion traps and other applications
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• Scaling Trapped Ion Quantum Computers Using Fast Gates and Microtraps
• Two-dimensional linear trap array for quantum information processing
• Measurement of ultra-low heating rates of a single antiproton in a cryogenic Penning trap
• Ion trap architectures and new directions
• Algorithmic Ground-state Cooling of Weakly-Coupled Oscillators using Quantum Logic
• TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing
• A Quantum von Neumann Architecture for Large-Scale Quantum Computing
• Technologies for trapped-ion quantum information systems
• Error tolerance of topological codes with independent bit-flip and measurement errors
• A Study on Fast Gates for Large-Scale Quantum Simulation with Trapped Ions
• Observation of superconductivity and surface noise using a single trapped ion as a field probe
• A room-temperature ion trapping apparatus with hydrogen partial pressure below $10^{-11}$ mBar
• Photo-induced charge carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions
• A cryogenic magneto-optical device for long wavelength radiation
• Tunable electronic structure and stoichiometry dependent disorder in Nanostructured VO${}_x$ films
• Test and characterization of multilayer ion traps on fused silica
• Studying fundamental physics using quantum enabled technologies with trapped molecular ions
• Ion trap with gold-plated alumina: substrate and surface characterization
• Error-Resilient Fast Entangling Gates for Scalable Ion-Trap Quantum Processors