Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping

Abstract

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{20}{\text{cm}}^{-3}$ shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration a degradation of the photoluminescence properties is not observed.

Manuscript including Supplemental material (15 pages, 5 figures)

References in corpus (1)

• Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping

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• Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
• Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
• Long-lived excitons in GaN/AlN nanowire heterostructures
• Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture
• Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study