59 citations · 110 across the 5 of their papers we have counts for
5 papers
Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering
M. Sun, R. Blasco, M. de la Mata +5
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…
Disentangling Phonon Channels in Nanoscale Thermal Transport
Samik Mukherjee, Marcin Wajs, Maria de la Mata +5
Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole me…
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Jonas Lähnemann, Martien Den Hertog, Pascal Hille +6
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission…
Long-lived excitons in GaN/AlN nanowire heterostructures
M. Beeler, C. B. Lim, P. Hille +6
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertion…
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
P. Hille, J. Müßener, P. Becker +8
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN b…