68 citations · 218 across the 5 of their papers we have counts for
5 papers
Influence of Polymorphism on the Electronic Structure of GaO
Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini +21
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. GaO has emerged as an altern…
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Maria Spies, Martien I. Den Hertog, Pascal Hille +6
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such…
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Jonas Lähnemann, Martien Den Hertog, Pascal Hille +6
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission…
Long-lived excitons in GaN/AlN nanowire heterostructures
M. Beeler, C. B. Lim, P. Hille +6
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertion…
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
P. Hille, J. Müßener, P. Becker +8
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN b…