59 citations · 208 across the 7 of their papers we have counts for
8 papers
Surface Diffusion Control Enables Tailored Aspect Ratio Nanostructures in Area-Selective Atomic Layer Deposition
Philip Klement, Daniel Anders, Lukas Gümbel +6
Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material de…
Electron paramagnetic resonance signatures of Co2+ and Cu2+ in b-Ga2O3
Jan E. Stehr, Detlev M. Hofmann, Weimin M. Chen +1
Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from tra…
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Maria Spies, Martien I. Den Hertog, Pascal Hille +6
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such…
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Jonas Lähnemann, Martien Den Hertog, Pascal Hille +6
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission…
Ge doping of GaN beyond the Mott transition
A. Ajay, J. Schörmann, M. Jimenez-Rodriguez +9
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K…
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
P. Hille, J. Müßener, P. Becker +8
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN b…