Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Abstract

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by van der Waals epitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

arXiv comment17 pages, 4 figrues

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Cited by in corpus (7)

• Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
• Magnetic Order in 3D Topological Insulators -- Wishful Thinking or Gateway to Emergent Quantum Effects?
• In-depth Analysis of Anisotropic Magnetoconductance in Bi${}_2$Se${}_3$ thin films with electron-electron interaction corrections
• From classical to quantum regime of topological surface states via defect engineering
• Correlation and current anomalies in helical quantum dots
• An ab initio investigation of Bi${}_2$Se${}_3$ topological insulator deposited on amorphous SiO${}_2$
• Spatiotemporal chaos in the interface growth of topological insulators