Time Constants of Spin-Dependent Recombination Processes

Abstract

We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical excitation and pulsed spin manipulation allows us to directly measure the recombination time constants of electrons via localized spin pairs and the time constant of spin pair formation as a function of the optical excitation intensity. Using electron nuclear double resonance, we show that the time constant of spin pair formation is determined by an electron capture process. Based on these time constants we devise a set of rate equations to calculate the current transient after a resonant microwave pulse and compare the results with experimental data. Finally, we critically discuss the effects of different boxcar integration time intervals typically used to analyze pulsed EDMR experiments on the determination of the time constants. The experiments are performed on phosphorus-doped silicon, where EDMR via spin pairs formed by phosphorus donors and Si/SiO2 interface dangling bond defects is detected.

17 pages, 12 figures

References in corpus (4)

• Electrical detection of 31P spin quantum states
• Fast nuclear spin hyperpolarization of phosphorus in silicon
• Electrical detection of spin echoes for phosphorus donors in silicon
• Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface

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• Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation
• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Real Time Electrical Detection of Coherent Spin Oscillations
• Optical dependence of electrically-detected magnetic resonance in lightly-doped Si:P devices
• Spin relaxation dynamics of radical-pair processes at low magnetic fields
• Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon
• Electron nuclear double resonance with donor-bound excitons in silicon