In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system

Abstract

Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time ${\tau }_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time ${\tau }_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.

3 pages, 3 figures

References in corpus (4)

• Transport in strongly correlated two dimensional electron fluids
• Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
• Strongly Enhanced Hole-Phonon Coupling in the Metallic State of the Dilute Two-Dimensional Hole Gas
• Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems