Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2
arXiv:1303.5861 · doi:10.1103/PhysRevB.87.165409
Abstract
Typical Raman spectra of transition metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak. As the dimensionality is lowered, the observed peak splits in two as a result of broken degeneracy. In contrast to our experimental findings, our phonon dispersion calculations reveal that these modes remain degenerate independent of the number of layers. Interestingly, for minuscule biaxial strain the degeneracy is preserved but once the crystal symmetry is broken by uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained WSe2 shows a perfect match to the measured Raman spectrum which suggests that uniaxial strain exists in WSe2 flakes possibly induced during the sample preparation and/or as a result of interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an indirect to direct bandgap transition from bulk to monolayers which is ubiquitous for semiconducting TMDs. These results not only allow us to understand the vibrational properties of WSe2 but also provides detailed insight to their physical properties.
http://link.aps.org/doi/10.1103/PhysRevB.87.165409
References in corpus (6)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
- High Efficiency Graphene Solar Cells by Chemical Doping
- Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2
Cited by in corpus (15)
- Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Non-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers
- Tuning of the electronic and optical properties of single layer black phosphorus by strain
- Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2
- Electronic properties of single-layer and multilayer transition metal dichalcogenides ( Mo, W and S, Se)
- Mechanics of freely-suspended ultrathin layered materials
- Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-Like WSe2 by Sulfur-Assisted Chemical Vapor Deposition
- Hexagonal AlN: Dimensional-Crossover-Driven Bandgap Transition
- Double resonance Raman modes in mono- and few-layer MoTe
- Exciton dynamics in WSe2 bilayers
- Ag and Au Atoms Intercalated in Bilayer Heterostructures of Transition Metal Dichalcogenides and Graphene
- Group Theory analysis of phonons in two-dimensional Transition Metal Dichalcogenides
- Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells
- A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2