Defect-mediated spin relaxation and dephasing in graphene
arXiv:1211.1417 · doi:10.1103/PhysRevLett.110.156601
Abstract
A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the other hand, show that graphene's spin relaxation is orders of magnitude faster than predicted. We present a quantum interference measurement that disentangles sources of magnetic and non-magnetic decoherence in graphene. Magnetic defects are shown to be the primary cause of spin relaxation, while spin-orbit interaction is undetectably small.
11 pages, includes main text and supplement
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- Spin transport in high-mobility graphene on WS substrate with electric-field tunable proximity spin-orbit interaction
- Ab initio spin-flip conductance of hydrogenated graphene nanoribbons: Spin-orbit interaction and scattering with local impurity spins
- Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface
- Electron spin dynamics of two-dimensional layered materials
- Suppression of decoherence in a graphene monolayer ring
- Electronic transport and scattering times in tungsten-decorated graphene
- Spin dependent quantum interference in non-local graphene spin valves
- Relationship between conductance fluctuation and weak localization in graphene
- Spin relaxation 1/f noise in graphene
- A two-channel model for Spin-relaxation noise