Real-time characterization of gated-mode single-photon detectors
arXiv:1207.6992 · doi:10.1109/JQE.2011.2163622
Abstract
We propose a characterization method for the overall detection efficiency, afterpulse and dark count probabilities of single-photon counting modules in real-time with simple instrumentation. This method can be applied when the module is running in its intended application, and is based on monitoring the statistics of the times between consecutive detections. A mathematical model is derived and fit to the data statistical distribution to simultaneously extract the characterization parameters. The feasibility of our scheme is demonstrated by performing measurements on three commercial devices based on cooled InGaAs APD operating in gated mode. Different statistical ensemble lengths were analyzed and results assess the scheme for real-time application.
References in corpus (7)
- Quantum key distribution over 122 km of standard telecom fiber
- High speed single photon detection in the near-infrared
- An avalanche-photodiode-based photon-number-resolving detector
- Gigahertz quantum key distribution with InGaAs avalanche photodiodes
- Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes
- Comprehensive Characterization of InGaAs/InP Avalanche Photodiodes at 1550 nm with an Active Quenching ASIC
- Ultrashort dead time of photon-counting InGaAs avalanche photodiodes