Afterpulsing model based on the quasi-continuous distribution of deep levels in single-photon avalanche diodes
arXiv:1409.6752 · doi:10.1080/09500340.2016.1220643
Abstract
We have performed a statistical characterization of the effect of afterpulsing in a free-running silicon single-photon detector by measuring the distribution of afterpulse waiting times in response to pulsed illumination and fitting it by a sum of exponentials. We show that a high degree of goodness of fit can be obtained for 5 exponentials, but the physical meaning of estimated characteristic times is dubious. We show that a continuous limit of the sum of exponentials with a uniform density between the limiting times gives excellent fitting results in the full range of the detector response function. This means that in certain detectors the afterpulsing is caused by a continuous band of deep levels in the active area of the photodetector.
10 pages, 4 figures
References in corpus (4)
- Comprehensive Characterization of InGaAs/InP Avalanche Photodiodes at 1550 nm with an Active Quenching ASIC
- A simple and robust method for characterization of afterpulsing in single photon detectors
- Characterization of a commercially available large area, high detection efficiency single-photon avalanche diode
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- Sequences of the ranged amplitudes as a universal method for fast noninvasive characterization of SPAD dark counts
- Parity-based, bias-free optical quantum random number generation with min-entropy estimation