Gated InGaAs Detector Characterization with Sub-Picosecond Weak Coherent Pulses
arXiv:2106.05599 · doi:10.1016/j.ijleo.2021.168280
Abstract
We propose and demonstrate a method to characterize a gated InGaAs single-photon detector (SPD). Ultrashort weak coherent pulses, from a mode-locked sub-picosecond pulsed laser, were used to measure photon counts, at varying arrival times relative to the start of the SPD gate voltage. The uneven detection probabilities within the gate window were used to estimate the afterpulse probability with respect to various detector parameters: excess bias, width of gate window and hold-off time. We estimated a lifetime of 2.1 microseconds for the half-life of trapped carriers, using a power-law fit to the decay in afterpulse probability. Finally, we quantify the timing jitter of the SPD using a time to digital converter with a resolution of 55 ps.
arXiv comment15 pages, 10 figures
References in corpus (6)
- Advances in InGaAs/InP single-photon detector systems for quantum communication
- High speed coherent one-way quantum key distribution prototype
- Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors
- A simple and robust method for characterization of afterpulsing in single photon detectors
- Real-time characterization of gated-mode single-photon detectors
- Advantages of gated silicon single photon detectors