Ultrashort dead time of photon-counting InGaAs avalanche photodiodes
arXiv:0905.2931 · doi:10.1063/1.3151864
Abstract
We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function of the emission from a diode laser with a single detector which works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quantum computing.
10 pages, 4 figures. Updated to published version
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- Advances in InGaAs/InP single-photon detector systems for quantum communication
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- Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes
- Interference of short optical pulses from independent gain-switched laser diodes for quantum secure communications
- Efficient Bell state analyzer for time-bin qubits with fast-recovery WSi superconducting single photon detectors
- Real-time characterization of gated-mode single-photon detectors
- Probing higher order correlations of the photon field with photon number resolving avalanche photodiodes
- Unexpected detection rate dependence of the intrinsic detection efficiency in single-photon detectors based on avalanche diodes
- Observation of two-photon interference effect with single non-photon-number resolving detector
- Observation of photon antibunching with a single conventional detector