Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

Abstract

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 ${}^{\circ }$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\times 10^{-6}$ ns${}^{-1}$, while the afterpulse probability is 1.6$\times 10^{-4}$ ns${}^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

3 pages and a few lines, 5 figures, 1 table. Accepted by Applied Physics Letters

References in corpus (10)

• Quantum Cryptography
• Gigahertz decoy quantum key distribution with 1 Mbit/s secure key rate
• High speed single photon detection in the near-infrared
• An avalanche-photodiode-based photon-number-resolving detector
• A High Speed, Post-Processing Free, Quantum Random Number Generator
• Gigahertz quantum key distribution with InGaAs avalanche photodiodes
• Comprehensive Characterization of InGaAs/InP Avalanche Photodiodes at 1550 nm with an Active Quenching ASIC
• Tunable Up-Conversion Photon Detector
• Free-running InGaAs/InP Avalanche Photodiode with Active Quenching for Single Photon Counting at Telecom Wavelengths
• Ultrashort dead time of photon-counting InGaAs avalanche photodiodes

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• 2.23 GHz gating InGaAs/InP single-photon avalanche diode for quantum key distribution
• Free Running Single Photon Detection based on a negative feedback InGaAs APD
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• Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution
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• Best-practice criteria for practical security of self-differencing avalanche photodiode detectors in quantum key distribution
• Dead time duration and active reset influence on the afterpulse probability of InGaAs/InP single-photon avalanche diodes
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