Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APD's
arXiv:quant-ph/0106007 · doi:10.1080/09500340108240900
Abstract
The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -60C. The afterpulse probability and the timing jitter are also studied. The results obtained are compared with those of other papers and applied to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 kilometers.
8 pages, 10 figures, submitted to Journal of Modern Optics
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