Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector
arXiv:quant-ph/0605042 · doi:10.1109/JQE.2006.871067
Abstract
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.