Gate defined zero- and one-dimensional confinement in bilayer graphene

Abstract

We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be electrostatically induced by applying appropriate voltages to the gates. The high quality of the devices becomes apparent from conductance quantization in the constrictions at low temperature. The islands exhibit clear Coulomb blockade and single-electron transport.

5 pages, 5 figures

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Cited by in corpus (7)

• The electronic properties of bilayer graphene
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate
• Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions
• Wigner localization in a graphene quantum dot with a mass gap
• Measuring the local quantum capacitance of graphene using a strongly coupled graphene nanoribbon
• Electron flow in split-gated bilayer graphene