Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

Abstract

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50\mu {\mathrm{m}}^2$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $\nu =2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11}{\text{cm}}^{-2}$ and we show that a doping of $10^{13}{\text{cm}}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.

4 pages, 3 figures

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• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Multicomponent fractional quantum Hall effect in graphene
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
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Cited by in corpus (4)

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• Disorder-perturbed Landau levels in high electron mobility epitaxial graphene
• High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen