activity
20122024
most citedQuantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

97 citations · 181 across the 5 of their papers we have counts for

collaborators

5 papers

physics.optics20241 cited

Extreme ultraviolet lithography reaches 5 nm resolution

Iason Giannopoulos, Iacopo Mochi, Michaela Vockenhuber +2

Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development…

physics.app-ph202332 cited

Resistless EUV lithography: photon-induced oxide patterning on silicon

Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis +7

In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading litho…

cond-mat.mes-hall201497 cited

Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

F. Lafont, R. Ribeiro-Palau, D. Kazazis +9

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within in relative value, but operating at lower magnetic field…

cond-mat.mes-hall201417 cited

Magnetoresistance of disordered graphene: from low to high temperatures

B. Jabakhanji, D. Kazazis, W. Desrat +3

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large…

cond-mat.mes-hall201234 cited

Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

E. Pallecchi, M. Ridene, D. Kazazis +5

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a size Hall bar we observe the half-int…