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F. Schopfer

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2
ORCID 0000-0002-1738-048X
same name
  • F. Schopfer — 2 papers, h 16

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedObservation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

34 citations · 36 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2015★ 2 cited

Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology

R. Ribeiro-Palau, F. Lafont, J. Brun-Picard +8

The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant h and the electron charge e. In graphene, the…

cond-mat.mes-hall2012★ 34 cited

Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

E. Pallecchi, M. Ridene, D. Kazazis +5

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a 50×50μm2 size Hall bar we observe the half-int…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.