97 citations · 156 across the 4 of their papers we have counts for
4 papers
Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
F. Lafont, R. Ribeiro-Palau, D. Kazazis +9
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within in relative value, but operating at lower magnetic field…
Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
F. Lafont, R. Ribeiro-Palau, Z. Han +8
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the…
High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
E. Pallecchi, F. Lafont, V. Cavaliere +4
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation…
Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
E. Pallecchi, M. Ridene, D. Kazazis +5
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a size Hall bar we observe the half-int…