paper

Few electron double quantum dot in an isotopically purified Si quantum well

arXiv:1202.3237 · doi:10.1063/1.3701588

Abstract

We present a few electron double quantum dot (QD) device defined in an isotopically purified Si quantum well (QW). An electron mobility of is observed in the QW which is the highest mobility ever reported for a 2D electron system in Si. The residual concentration of Si nuclei in the Si QW is lower than , at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate.

4 pages, 3 figures

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