Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Abstract

Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in which charge transport occurs via thermal activation over a gap ~ 80 meV. This non-invasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.

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• Organometallic Hexahapto Functionalization of Single Layer Graphene as a Route to High Mobility Graphene Devices
• Electrochemical Grafting of Naphthylmethyl Radicals to Epitaxial Graphene: A Versatile Platform to Reversibly Engineer the Band Structure and Transport Properties of Graphene
• H-Si bonding-induced unusual electronic properties of silicene: a method to identify hydrogen concentration
• Impact of complex adatom-induced interactions on quantum spin Hall phases
• Electrically tunable resonant scattering in fluorinated bilayer graphene
• Fluorine absorption on single and bilayer graphene: Role of sublattice and layer decoupling
• Gate-controlled photo-oxidation of graphene for electronic structure modification
• Reductive Functionalization of Graphenides with Nickel(II) Porphyrin Diazonium Compounds
• First principles study of iron-based molecule grafted on graphene