Critical Behavior of a Strongly Interacting 2D Electron System

Abstract

With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density $n_t$ consistent with the critical form $(-T/S)\propto (n_s-n_t{)}^x$ with $x=1.0\pm 0.1$ ($T$ is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly-interacting 2D electron system.

Published version - 5 pages, 3 figures

References in corpus (3)

• Metal-insulator transition in two-dimensional electron systems
• Self-doping instability of the Wigner-Mott insulator
• Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime

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