Graphene microwave transistors on sapphire substrates
arXiv:1106.5529 · doi:10.1063/1.3633105
Abstract
We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.
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- Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications
- Microwave calibration of qubit drive line components at millikelvin temperatures
- Wide bandwidth nanowire electromechanics on insulating substrates at room temperature
- A corner reflector of graphene Dirac fermions as a phonon-scattering sensor
- Thermionic charge transport in CMOS nano-transistors
- Landau velocity for collective quantum Hall breakdown in bilayer graphene
- RF Transport Electromagnetic Properties of CVD Graphene from DC to 110 MHz