Coulomb Drag and High Resistivity Behavior in Double Layer Graphene
arXiv:1105.5399 · doi:10.1209/0295-5075/95/18001
Abstract
We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.
The version v2 has an extra figure as supplementary information
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- Coulomb drag in graphene single layers separated by a thin spacer
- Plasmons in layered structures including graphene
- Coulomb Drag and High Resistivity Behavior in Double Layer Graphene
- Energy-driven Drag at Charge Neutrality in Graphene
- Plasmon and dielectric background inhomogeneity enhancement of Coulomb drag in graphene double-layer structures
- Coulomb drag in graphene - boron nitride heterostructures: the effect of virtual phonon exchange
- Interaction dominated transport and Coulomb drag in bilayer graphene