Response properties of III-V dilute magnetic semiconductors: interplay of disorder, dynamical electron-electron interactions and band-structure effects

Abstract

A theory of the electronic response in spin and charge disordered media is developed with the particular aim to describe III-V dilute magnetic semiconductors like GaMnAs. The theory combines a detailed k.p description of the valence band, in which the itinerant carriers are assumed to reside, with first-principles calculations of disorder contributions using an equation-of-motion approach for the current response function. A fully dynamic treatment of electron-electron interaction is achieved by means of time-dependent density functional theory. It is found that collective excitations within the valence band significantly increase the carrier relaxation rate by providing effective channels for momentum relaxation. This modification of the relaxation rate, however, only has a minor impact on the infrared optical conductivity in GaMnAs, which is mostly determined by the details of the valence band structure and found to be in agreement with experiment.

arXiv comment15 pages, 9 figures

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Cited by in corpus (7)

• Plasmonics in Dirac systems: from graphene to topological insulators
• Dielectric function of the semiconductor hole liquid: Full frequency and wave vector dependence
• Plasmons in spin-orbit coupled two-dimensional hole gas systems
• Carrier-density-controlled anisotropic spin susceptibility of two-dimensional hole systems
• Suppression of Coulomb exchange energy in quasi-two-dimensional hole systems
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• Coulomb-exchange effects in nanowires with spin splitting due to a radial electric field