Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon

Abstract

We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spins in isotopically purified 28Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.

17 pages, 6 figures

References in corpus (10)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Solid state quantum memory using the 31P nuclear spin
• Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
• Coherence Time of a Solid-State Nuclear Qubit
• Electric Field Control of Shallow Donor Impurities in Silicon
• Single-atom doping for quantum device development in diamond and silicon
• Ultrafast control of donor-bound electron spins with single detuned optical pulses
• Robust manipulation of electron spin coherence in an ensemble of singly charged quantum dots
• Quantum non-demolition measurements of single donor spins in semiconductors
• Optical Detection of a Single Nuclear Spin

Cited by in corpus (5)

• Hybrid solid state qubits: the powerful role of electron spins
• Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon
• Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
• Probing a Single Nuclear Spin in a Silicon Single Electron Transistor
• Strained Donor-Bound Excitons in ${}^{28}$Si