Electron spin relaxation in intrinsic bulk InP semiconductor

Abstract

Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70 K. The reflectivity change from bleaching into absorption is observed with increasing pump photon energy, which can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Density dependence of electron spin relaxation time shows similar tendency at room temperature and 70 K. With increasing carrier density, the electron spin relaxation time increases and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction [Jiang and Wu, Phys. Rev. B 79, 125206 (2009)] and D'yakonov-Perel' mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InP semiconductor.

arXiv comment23 pages, 4figures,40reference

References in corpus (13)

• Spintronics: Fundamentals and applications
• Semiconductor Spintronics
• Spin dynamics in semiconductors
• Spin relaxation of conduction electrons in bulk III-V semiconductors
• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• High temperature spin dephasing in n-typed GaAs quantum wells
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Multi-subband effect in spin dephasing in semiconductor quantum wells
• Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and $p$-type GaAs quantum wells from a fully microscopic approach
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• Ultrafast Spin Dynamics in Optically Excited Bulk GaAs at Low Temperatures
• Comment on "Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature"
• Electron spin relaxation in $p$-type GaAs quantum wells

Cited by in corpus (1)

• Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric fields