Well-width dependence of valley splitting in Si/SiGe quantum wells

Abstract

The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $\nu =1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.

3 pages, 2 figures

References in corpus (2)

• Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs. effective mass calculation
• Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

Cited by in corpus (6)

• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
• Coherent spin-valley oscillations in silicon
• Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
• Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells
• Effect of quantum Hall edge strips on valley splitting in silicon quantum wells