Weak Localization and Transport Gap in Graphene Antidot Lattices

Abstract

We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a high-resistance state and a transport gap of a few mV around the Dirac point. We observe pronounced weak localization in the magnetoresistance, indicating strong intervalley scattering at the antidot edges. The area of phase-coherent paths is bounded by the unit cell size at low temperatures, so each unit cell of the lattice acts as a ballistic cavity.

some revisions, to appear in New Journal of Physics, Special Issue Graphene

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• Patched Green's function techniques for two dimensional systems: Electronic behaviour of bubbles and perforations in graphene
• Phase Coherent Transport in Graphene Nanoribbons and Graphene Nanoribbon Arrays
• Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
• Dirac model of electronic transport in graphene antidot barriers
• Graphene on graphene antidot lattices: Electronic and transport properties
• Electronic properties of a graphene antidot in magnetic fields
• Electronic and transport properties in geometrically disordered graphene antidot lattices
• Quantum corrections to transport in graphene: a trajectory-based semiclassical analysis
• Plasmon-mediated Coulomb drag between graphene waveguides
• Thermoelectric properties of disordered graphene antidot devices