A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

Abstract

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation.

16 pages, 9 figures, submitted to Nucl. Instr and Meth A

References in corpus (2)

• A Study of Monolithic CMOS Pixel Sensors Back-thinning and their Application for a Pixel Beam Telescope
• Development of CMOS monolithic pixel sensors with in-pixel correlated double sampling and fast readout

Cited by in corpus (5)

• High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy
• Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope
• Cluster Imaging with a Direct Detection CMOS Pixel Sensor in Transmission Electron Microscopy
• Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
• CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy